PART |
Description |
Maker |
BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
IXDN75N120 L209 |
High Voltage IGBT IGBT Discretes: NPT IGBT From old datasheet system High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
SGH80N60UFD SGH80N60UFDTU |
Discrete, High Performance IGBT with Diode Ultrafast IGBT 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
BCM8220 |
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
|
BOARDCOM[Broadcom Corporation.]
|
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS[IXYS Corporation]
|
STA9KXXXP |
(STA9K7.5P - STA9K100P) 9000 WATTS PEAK PULSE POWE 7.5-100 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
|
Solid States Devices
|
BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
IXSP24N60B |
48 A, 600 V, N-CHANNEL IGBT, TO-220AB TO-220, 3 PIN High Speed IGBT
|
IXYS, Corp. IXYS Corporation
|
SGP13N60UFD SGP13N60UFDTU |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
|
Fairchild Semiconductor
|